4h-sic Power Schottky Diodes. on the Way to Solve Size Limiting Issues
نویسندگان
چکیده
In this paper we report on experimental results in solving defect-related issues limiting the size and performance of 4H-SiC based power Schottky diodes. Several techniques improving wafer quality were used in line to fabricate power Schottky diodes with high current capability for blocking voltage over 600 V. Results of X-ray investigation of wafers on every step of treatment from initial wafer to template with diode base layer with corresponding improvement of structural quality is reported. Ways of defects density reducing are discussed and compared. Results on 5 mm diameter 4H-SiC Schottky diodes fabrication and characterization are reported. The on –state resistance as low as 0.07 Ω is demonstrated. Corresponding forward voltage drop at 50 A is estimated to be 5 V.
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